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ELM5J400RA-S Datasheet(PDF) 1 Page - ELM Technology Corporation |
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ELM5J400RA-S Datasheet(HTML) 1 Page - ELM Technology Corporation |
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1 / 5 page  1 ELM5J400RA-S 5 - ■General description ■Features Single N-channel MOSFET Pin No. Pin name 1 GATE 2 DRAIN 3 SOURCE ■Pin configuration ■Circuit SOT-89(TOP VIEW) S G D ■Maximum absolute ratings ■Thermal characteristics Parameter Symbol Typ. Max. Unit Maximum junction-to-ambient Rθja 120 °C/W Parameter Symbol Limit Unit Drain-source voltage Vds 30 V Gate-source voltage Vgs ± 20 V Continuous drain current(Tj=150°C) Ta=25°C Id 5.6 A Ta=70°C 3.6 Pulsed drain current Idm 10 A Power dissipation Tc=25°C Pd 1.45 W Tc=70°C 0.60 Junction and storage temperature range Tj, Tstg - 55 to 150 °C ELM5J400RA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • Vds=30V • Id=5.6A • Rds(on) = 72mΩ (Vgs=10V) • Rds(on) = 95mΩ (Vgs=4.5V) 1 2 3 Ta=25°C. Unless otherwise noted. |
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