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HN58C65 Datasheet(PDF) 5 Page - Hitachi Semiconductor

Part No. HN58C65
Description  8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
Download  16 Pages
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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HN58C65 Datasheet(HTML) 5 Page - Hitachi Semiconductor

 
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HN58C65 Series
5
DC Characteristics (Ta = 0 to +70
°C, V
CC = 5 V ± 10%)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input leakage current
I
LI
——2
µAV
CC = 5.5 V
Vin = 5.5 V
Output leakage current
I
LO
——2
µAV
CC = 5.5 V
Vout = 5.5/0.4 V
V
CC current (Standby)
I
CC1
——1
mA
CE = V
IH, CE = VCC
V
CC current (Active)
I
CC2
8
mA
Iout = 0 mA
Duty = 100%
Cycle = 1
µs at
V
CC = 5.5 V
25
mA
Iout = 0 mA
Duty = 100%
Cycle = 250 ns at
V
CC = 5.5 V
Input low voltage
V
IL
–0.3
*1
0.8
V
Input high voltage
V
IH
2.2
V
CC + 1
V
Output low voltage
V
OL
0.4
V
I
OL = 2.1 mA
Output high voltage
V
OH
2.4
V
I
OH = –400 µA
Note:
1. –1.0 V for pulse width
≤ 50 ns
Capacitance (Ta = 25
°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
*1
Cin
6
pF
Vin = 0 V
Output capacitance
*1
Cout
12
pF
Vout = 0 V
Note:
1. This parameter is periodically sampled and not 100% tested.
AC Characteristics (Ta = 0 to +70
°C, V
CC = 5 V ± 10%)
Test Conditions
Input pulse levels: 0.4 V to 2.4 V
Input rise and fall time:
≤ 20 ns
Output load: 1TTL gate + 100 pF
Reference levels for measuring timing: 0.8 V and 2 V


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