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XR76120ELMTR-F Datasheet(PDF) 4 Page - Exar Corporation |
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XR76120ELMTR-F Datasheet(HTML) 4 Page - Exar Corporation |
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4 / 19 page  XR 76116/20 4/19 REV1A Electrical Characteristics (Continued) Specifications are for operating junction temperature of TJ = 25°C only; limits applying over the full operating junction temperature range are denoted by a •. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise indicated, VIN = 12V, SW = AGND = PGND = 0V, CVCC = 4.7uF. Symbol Parameter Conditions • Min Typ Max Units Mode Control (FCCM) FCCM mode logic high threshold FCCM rising • 2.4 V FCCM mode logic low threshold FCCM falling • 0.4 V Input leakage current 100 nA Open Feedback/OVP Detect (VSNS) OVP trip high threshold VSNS rising. Specified as % of VREF • 115 120 125 % OVP trip low threshold VSNS falling. Specified as % of VREF • 115 % OVP comparator delay VSNS rising • 0.5 1 3.5 μs Delay to turn off power stage from an overvoltage event VSNS rising • 3.5 μs Protection: OCP, OTP, Short-Circuit Hiccup timeout 110 ms ILIM/RDS XR76116 6.30 7.15 8.00 μA/mΩ ILIM/RDS XR76120 14.5 16.2 18.0 μA/mΩ ILIM current temperature coefficient 0.4 %/°C ILIM comparator offset -4.7 0 4.7 mV ILIM comparator offset • -8.0 0 8.0 mV Current limit blanking 100 ns Thermal shutdown threshold Rising temperature 138 °C Thermal hysteresis 15 °C Feedback pin short-circuit threshold Percent of VREF, short circuit is active. After PGOOD asserts high. • 506070 % XR76116 Output Power Stage High-side MOSFET RDS(ON) IDS = 2A 7.7 10 mΩ Low-side MOSFET RDS(ON) IDS = 2A 7.0 10 mΩ Maximum output current • 15 A XR76120 Output Power Stage High-side MOSFET RDS(ON) IDS = 2A 7.7 10 mΩ Low-side MOSFET RDS(ON) IDS = 2A 3.1 3.5 mΩ Maximum output current • 20 A |
Similar Part No. - XR76120ELMTR-F |
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Similar Description - XR76120ELMTR-F |
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