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LM53635AQRNLTQ1 Datasheet(PDF) 5 Page - Texas Instruments |
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LM53635AQRNLTQ1 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 55 page 5 LM53625-Q1, LM53635-Q1 www.ti.com SNVSAA7A – DECEMBER 2015 – REVISED MAY 2016 Product Folder Links: LM53625-Q1 LM53635-Q1 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions are not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) A maximum of 42 V can be sustained at this pin for a duration of ≤ 500 ms at a duty cycle of ≤ 0.01%. (3) A voltage of 2 V below PGND and 2 V above VIN can appear on this pin for ≤ 200 ns with a duty cycle of ≤ 0.01%. (4) Under no conditions should the voltage on this pin be allowed to exceed the voltage on the PVIN1,PVIN2 or AVIN pins by more than 0.3 V. (5) Do not exceed the voltage rating on this pin. 7 Specifications 7.1 Absolute Maximum Ratings over the recommended operating junction temperature range of –40°C to +150°C (unless otherwise noted) (1) PARAMETER MIN MAX UNIT VIN (AVIN,PVIN1 and PVIN2) to AGND, PGND1 and PGND2(2) –0.3 40 V SW to AGND, PGND(3) –0.3 VIN + 0.3 V CBOOT to SW –0.3 3.6 V EN to AGND, PGND(2)(4) –0.3 40 V BIAS to AGND, PGND –0.3 16 V FB to AGND, PGND –0.3 16 V RESET to AGND, PGND –0.3 8 V RESET sink current(5) 10 mA SYNC to AGND,PGND(2)(4) –0.3 40 V FPWM to AGND,PGND(4) –0.3 40 V VCC to AGND,PGND –0.3 3.6 V Junction temperature –40 150 °C Storage temperature, Tstg –40 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2500 V Charged-device model (CDM), per AEC Q100-011 ±1000 |
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