NRND

LM5100, LM5101

www.ti.com

SNVS267C – MAY 2004 – REVISED MARCH 2005

Electrical Characteristics (continued)

Symbol

Parameter

Conditions

Typ

Units

0.5

V

HB Rising Threshold

5.7

6.6

7.1

V

HB Threshold Hysteresis

0.4

V

BOOT STRAP DIODE

Low-Current Forward Voltage

0.6

0.9

V

High-Current Forward Voltage

0.85

1.1

V

Dynamic Resistance

0.8

1.5

Ω

LO GATE DRIVER

Low-Level Output Voltage

0.23

0.4

V

High-Level Output Voltage

0.35

0.55

V

Peak Pullup Current

1.6

A

Peak Pulldown Current

1.8

A

HO GATE DRIVER

Low-Level Output Voltage

0.23

0.4

V

High-Level Output Voltage

0.35

0.55

V

Peak Pullup Current

1.6

A

Peak Pulldown Current

1.8

A

THERMAL RESISTANCE

(2)

Junction to Ambient

SOIC-8

170

°C/W

40

(2)

The

(3)

4 layer board with Cu finished thickness 1.5/1/1/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm

ground and power planes embedded in PCB. See Application Note AN-1187 (SNOA401).

Switching Characteristics

Symbol

Parameter

Conditions

Typ

Units

LM5100

Lower Turn-Off Propagation Delay (LI

24

45

ns

Falling to LO Falling)

Upper Turn-Off Propagation Delay (HI

24

45

ns

Falling to HO Falling)

Lower Turn-On Propagation Delay (LI

24

45

ns

Rising to LO Rising)

Upper Turn-On Propagation Delay (HI

24

45

ns

Rising to HO Rising)

Delay Matching: Lower Turn-On and Upper

2

10

ns

Turn-Off

Delay Matching: Lower Turn-Off and Upper

2

10

ns

Turn-On

Either Output Rise/Fall Time

15

ns

Either Output Rise/Fall Time

0.6

µs

(3V to 9V)

Minimum Input Pulse Width that Changes

50

ns

the Output

(1)

Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation

using Statistical Quality Control (SQC) methods. Limits are used to calculate TI’s Average Outgoing Quality Level (AOQL).

Copyright © 2004–2005, Texas Instruments Incorporated

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