K6X0808C1D-GF70 datasheet(2/9 Pages) SAMSUNG

Part #	K6X0808C1D-GF70

Description	32Kx8 bit Low Power CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS SRAM

K6X0808C1D Family

Revision 1.0

December 2003

2

32Kx8 bit Low Power full CMOS Static RAM

GENERAL DESCRIPTION

The K6X0808C1D families are fabricated by SAMSUNG

′s

advanced CMOS process technology. The families support

verious operating temperature ranges and have various pack-

age types for user flexibility of system design. The families

also support low data retention voltage for battery back-up

operation with low data retention current.

FEATURES

• Process Technology: Full CMOS

• Organization: 32K x 8

• Power Supply Voltage: 4.5~5.5V

• Low Data Retention Voltage: 2V(Min)

• Three state output and TTL Compatible

• Package Type: 28-DIP-600B, 28-SOP-450,

28-TSOP1-0813.4F/R

PRODUCT FAMILY

1. The parameters are tested with 50pF test load

Product Family Operating Temperature Vcc Range

Speed

Power Dissipation

PKG Type

Standby

(ISB1, Max)

Operating

(ICC2, Max)

K6X0808C1D-F

Industrial(-40~85

°C)

4.5~5.5V

551)/70ns

15

µA

25mA

28-DIP-600B, 28-SOP-450,

28-TSOP1-0813.4F/R

K6X0808C1D-Q

Automotive(-40~125

°C)

25

µA

28-SOP-450, 28-TSOP1-0813.4F

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

PIN DESCRIPTION

Pin Name

Function

Pin Name

Function

CS

Chip Select Input

I/O1~I/O8

Data Inputs/Outputs

OE

Output Enable Input

Vcc

Power

WE

Write Enable Input

Vss

Ground

A0~A14

Address Inputs

NC

No connect

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O1

I/O2

I/O3

VSS

VCC

WE

A13

A8

A9

A11

OE

A10

CS

I/O8

I/O7

I/O6

I/O5

I/O4

28-DIP

28-SOP

15

16

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

A11

A9

A8

A13

WE

VCC

A3

A14

A12

A7

A6

A5

A4

A10

CS

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

28-TSOP

Type1 - Forward

1

2

3

4

5

6

7

8

9

10

11

12

13

14

27

26

28

25

24

23

22

21

20

19

18

17

16

15

OE

28-TSOP

A11

A9

A8

A13

WE

VCC

A3

A14

A12

A7

A6

A5

A4

A10

CS

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

27

26

28

25

24

23

22

21

20

19

18

17

16

15

OE

Type1 - Reverse

FUNCTIONAL BLOCK DIAGRAM

Precharge circuit.

Memory array

I/O Circuit

Column select

Clk gen.

Row

select

I/O1

Data

cont

Data

cont

I/O8

CS

WE

OE

Control

logic

Row

Addresses

Column Addresses

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