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SI4401DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4401DY
Description  P-Channel 40-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4401DY Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si4401DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71226
S-03452—Rev. C, 09-Apr-01
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = –32 V, VGS = 0 V
–1
m
Zero Gate Voltage Drain Current
IDSS
VDS = –32 V, VGS = 0 V, TJ = 70_C
–10
mA
On-State Drain Currenta
ID(on)
VDS = –5 V, VGS = –10 V
–30
A
VGS = –10 V, ID = –10.5 A
0.013
0.0155
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –4.5 V, ID = –8.7 A
0.0185
0.0225
W
Forward Transconductancea
gfs
VDS = –15 V, ID = –10.5 A
26
S
Diode Forward Voltagea
VSD
IS = –2.7 A, VGS = 0 V
–0.74
–1.1
V
Dynamicb
Total Gate Charge
Qg
37.5
50
Gate-Source Charge
Qgs
VDS = –15 V, VGS = –5 V, ID = –10.5 A
14.3
nC
Gate-Drain Charge
Qgd
10.7
Turn-On Delay Time
td(on)
17
30
Rise Time
tr
VDD = –15 V, RL = 15 W
18
30
Turn-Off Delay Time
td(off)
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
122
190
ns
Fall Time
tf
55
85
Gate Resistance
Rg
3.8
W
Source-Drain Reverse Recovery Time
trr
IF = –2.1 A, di/dt = 100 A/ms
45
ns
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
0
2468
10
VGS = 10 thru 5 V
TC = 125_C
–55
_C
2 V
25
_C
Output Characteristics
Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
4 V
3 V


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