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K6X1008T2D-TF85 Datasheet(PDF) 4 Page - Samsung semiconductor |
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K6X1008T2D-TF85 Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 9 page CMOS SRAM K6X1008T2D Family Revision 1.0 September 2003 4 RECOMMENDED DC OPERATING CONDITIONS1) Note: 1. Commercial Product: TA=0 to 70 °C, Otherwise specified . Industrial Product: TA=-40 to 85 °C, Otherwise specified Automotive Product: TA=-40 to 125 °C, Otherwise specified 2. Overshoot: Vcc+3.0V in case of pulse width ≤30ns. 3. Undershoot: -3.0V in case of pulse width ≤30ns. 4. Overshoot and undershoot are sampled, not 100% tested. Item Symbol Min Typ Max Unit Supply voltage Vcc 2.7 3.0/3.3 3.6 V Ground Vss 0 0 0 V Input high voltage VIH 2.2 - Vcc+0.22) V Input low voltage VIL -0.23) - 0.6 V CAPACITANCE1) (f=1MHz, TA=25 °C) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Output capacitance CIO VIO=0V - 10 pF DC AND OPERATING CHARACTERISTICS Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc -1 - 1 µA Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read - - 2 mA Average operating current ICC1 Cycle time=1 µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V, VIN ≤0.2V or VIN≥VCC-0.2V - - 3 mA ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL - - 20 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL - - 0.3 mA Standby Current(CMOS) ISB1 CS1 ≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V, Other inputs=0~Vcc K6X1008T2D-B - - 6 µA K6X1008T2D-F - - 6 µA K6X1008T2D-Q - - 10 µA |
Similar Part No. - K6X1008T2D-TF85 |
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Similar Description - K6X1008T2D-TF85 |
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