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DMT6016LFDF-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMT6016LFDF-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMT6016LFDF Datasheet number: DS37203 Rev. 5 - 2 2 of 7 www.diodes.com March 2016 © Diodes Incorporated DMT6016LFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 8.9 7.1 A t<10s TA = +25°C TA = +70°C ID 11.1 8.9 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 60 A Maximum Body Diode Continuous Current IS 2.2 A Avalanche Current (Note 7) L = 0.1mH IAS 15.3 A Avalanche Energy (Note 7) L = 0.1mH EAS 11.7 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 0.82 W TA = +70°C 0.52 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 153 °C/W t<10s 97 Total Power Dissipation (Note 6) TA = +25°C PD 1.9 W TA = +70°C 1.2 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 66 °C/W t<10s 42 Thermal Resistance, Junction to Case (Note 6) RθJC 14.7 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.0 3.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 2 16 m Ω VGS = 10V, ID = 10A 17.2 27 VGS = 4.5V, ID = 6A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 864 pF VDS = 30V, VGS = 0V f = 1.0MHz Output Capacitance Coss 282 Reverse Transfer Capacitance Crss 27.1 Gate Resistance Rg 1.35 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg 17 nC VDS = 30V, ID = 10A Total Gate Charge (VGS = 4.5V) Qg 8.4 Gate-Source Charge Qgs 3.1 Gate-Drain Charge Qgd 4.3 Turn-On Delay Time tD(ON) 3.4 nS VGS = 10V, VDD = 30V, Rg = 6Ω, ID = 10A Turn-On Rise Time tR 5.2 Turn-Off Delay Time tD(OFF) 12.9 Turn-Off Fall Time tF 6.8 Body Diode Reverse Recovery Time tRR 22 nS IS = 10A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 11.1 nC IS = 10A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMT6016LFDF-13 |
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Similar Description - DMT6016LFDF-13 |
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