SN65HVD30-EP, SN65HVD31-EP, SN65HVD32-EP

SN65HVD33-EP, SN65HVD34-EP, SN65HVD35-EP

SGLS367E – SEPTEMBER 2006 – REVISED SEPTEMBER 2015

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7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage

3

3.6

V

Voltage at any bus terminal (separately or common mode)

12

V

'HVD30, 'HVD33

25

Signaling rate

'HVD31, 'HVD34

5

Mbps

'HVD32, 'HVD35

1

Differential load resistance

54

60

Ω

High-level input voltage

D, DE, RE

2

V

Low-level input voltage

D, DE, RE

0

0.8

V

Differential input voltage

–12

12

V

Driver

–60

High-level output current

mA

Receiver

–8

Driver

60

Low-level output current

mA

Receiver

8

Ambient still-air temperature

–55

°C

(1)

The algebraic convention, in which the least positive (most negative) limit is designated as minimum, is used in this data sheet.

(2)

Long-term high-temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction of

overall device life. See http://www.ti.com/ep_quality for additional information on enhanced plastic packaging.

7.4 Thermal Information

D (SOIC)

D (SOIC)

UNIT

8 PINS

14 PINS

Junction-to-ambient thermal resistance

135

92

°C/W

Junction-to-case (top) thermal resistance

43

59

°C/W

Junction-to-board thermal resistance

44

61

°C/W

Junction-to-top characterization parameter

12.1

5.7

°C/W

Junction-to-board characterization parameter

49.7

30.7

°C/W

Junction-to-case (bottom) thermal resistance

—

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6

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