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LM3242TMX/NOPB Datasheet(PDF) 6 Page - Texas Instruments

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Part # LM3242TMX/NOPB
Description  750mA Miniature Adjustable Step-Down DC-DC Converter
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM3242TMX/NOPB Datasheet(HTML) 6 Page - Texas Instruments

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LM3242
SNOSB48E – OCTOBER 2011 – REVISED AUGUST 2015
www.ti.com
6.6 System Characteristics
The following spec table entries are ensured by design providing the component values in the Typical Application are used.
These parameters are not ensured by production testing. Minimum and Maximum values apply over the full operating
ambient temperature range (
−30°C ≤ TA ≤ +90°C) and over the VIN range = 2.7 V to 5.5 V unless otherwise specified. L = 0.5
µH, DCR = 50 m
Ω, CIN = 10 µF, 6.3 V, 0603 (1608), COUT = 4.7 µF, 6.3 V, 0402.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
D
Maximum duty cycle
100%
VIN = VGS = 3.1 V, IOUT = –500 mA
RBP
Bypass mode resistance(1)
75
m
VCON > 1.16 V
2.7 V
≤ VIN ≤ 5.5 V
750
2.5 × VCON
≤ VIN − 285 mV
Maximum output current
IOUT
mA
2.7 V
≤ VIN ≤ 5.5 V
capability
2.5 × VCON
≥ VIN – 165 mV, Bypass
1000
mode
CVCON
VCON input capacitance
VCON = 1 V, Test frequency = 100 KHz
< 1
pF
−3%
3%
VOUT
VCON range 0.16 V to 1.44 V
0 mA
≤ IOUT ≤ 750 mA
(2)
Linearity
−50
50
mV
VIN = 3.6 V, VOUT = 0.8 V
75%
IOUT = 10 mA, ECO mode
VIN = 3.6 V, VOUT = 1.8 V
η
Efficiency
90%
IOUT = 200 mA, PWM mode
VIN = 3.9 V, VOUT = 3.3 V
95%
IOUT = 500 mA, PWM mode
VIN = 3.6 V to 4.2 V, TR = TF = 10 µs,
LINE TR
Line transient response
50
mVpk
IOUT = 100 mA, VOUT = 0.8V
VIN = 3.1 V/3.6 V/4.5 V, VOUT = 0.8 V,
LOAD TR
Load transient response
IOUT = 50 mA to 150 mA
50
mVpk
TR = TF = 0.1 µs
(1)
Total resistance in Bypass mode. Total includes the Bypass FET resistance in parallel with the PWM switch path resistance (PFET
resistance and series inductor parasistic resistance.)
(2)
Linearity limits are ±3% or ±50 mV, whichever is larger. VOUT is monotonic in nature with respect to VCON input.
6.7 Timing Requirements
MIN
NOM
MAX
UNIT
VOUT rise time, VCON change to 90%
VIN = 3.7 V, VOUT = 1.4 V to 3.4 V
9
µs
0.1 µs < VCON_TR < 1 µs, RL = 12 Ω
TVCON_TR
VOUT fall time VCON change to 10%
VIN = 3.7 V, VOUT = 3.4 V to 1.4 V
9
µs
0.1 µs < VCON_TF < 1 µs, RL = 12 Ω
Turnon time (time for output to reach 95% final value after Enable
low-to-high transition)
TON
50(1)
µs
EN = Low-to-High, VIN = 4.2 V, VOUT = 3.4 V
IOUT = < 1 mA, COUT = 4.7 µF
TBP, NEG
Auto bypass detect negative threshold delay time(2)
10
µs
TBP, POS
Auto bypass detect positive threshold delay time(3)
0.1
µs
(1)
This parameter is not production-limit tested.
(2)
Entering Bypass mode VIN is compared to the programmed output voltage (2.5 × VCON). When VIN − (2.5 × VCON) falls below VBP,NEG
longer than TBP,NEG, the Bypass FET turns on, and the switching FET turns on.
(3)
Bypass mode is exited when VIN − (2.5 × VCON) exceeds VBP,POS longer than TBP,POS, and PWM mode resumes. The hysteresis for
the bypass detection threshold VBP,POS – VBP,NEG is always be positive and will be approximately 50 mV.
6
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