SN65HVD1040-HT

www.ti.com

SLLSEA6D – DECEMBER 2011 – REVISED AUGUST 2012

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE

ORDERABLE PART NUMBER

TOP-SIDE MARKING

KGD (bare die)

SN65HVD1040SKGD3

NA

–55°C to 210°C

HKQ

SN65HVD1040SHKQ

HVD1040SHKQ

–55°C to 175°C

D

SN65HVD1040HD

H1040

(1)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

Web site at www.ti.com.

BARE DIE INFORMATION

DIE

BACKSIDE

BOND PAD

BACKSIDE FINISH

BOND PAD THICKNESS

THICKNESS

POTENTIAL

METALLIZATION COMPOSITION

15 mils.

Silicon with backgrind

Floating

CuNiPd

15 microns

Table 2. BOND PAD COORDINATES (µm)

DESCRIPTION

PAD NUMBER

X MIN

Y MIN

X MAX

Y MAX

PAD SIZE X

PAD SIZE Y

TXD

1

53.64

162

137.7

246.06

84.06

84.06

GND

2

804.06

50.85

888.12

134.91

84.06

84.06

GND

3

920.07

50.85

1004.13

134.91

84.06

84.06

Vcc

4

1320.21

54.18

1404.27

138.24

84.06

84.06

Vcc

5

1431.09

54.18

1515.15

138.24

84.06

84.06

RXD

6

2148.75

164.34

2232.81

248.4

84.06

84.06

SPLIT

7

2147.4

707.49

2231.46

791.55

84.06

84.06

CANL

8

771.93

907.38

855.99

991.44

84.06

84.06

CANH

9

527.31

907.38

611.37

991.44

84.06

84.06

STB

10

62.28

806.13

146.34

890.19

84.06

84.06

Copyright © 2011–2012, Texas Instruments Incorporated

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