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IXXH75N60B3D1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXXH75N60B3D1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 7 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXXH75N60B3D1 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. e ∅ P TO-247 (IXXH) Outline 1 2 3 Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. V F I F = 30A, V GE = 0V, Note 1 2.7 V T J = 150°C 1.6 V I RM T J = 100°C 4 A t rr T J = 100°C 100 ns 25 ns R thJC 0.9 °C/W I F = 30A, V GE = 0V, -diF/dt = 100A/μs, V R = 100V I F = 1A, V GE = 0V, -diF/dt = 100A/μs, VR = 30V Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 60A, VCE = 10V, Note 1 20 32 S C ies 3290 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 195 pF C res 63 pF Q g(on) 107 nC Q ge I C = 75A, VGE = 15V, VCE = 0.5 • VCES 30 nC Q gc 48 nC t d(on) 35 ns t ri 75 ns E on 1.7 mJ t d(off) 118 160 ns t fi 125 ns E off 1.5 2.1 mJ t d(on) 36 ns t ri 72 ns E on 2.6 mJ t d(off) 145 ns t fi 170 ns E off 2.2 mJ R thJC 0.20 °C/W R thCS 0.21 °C/W Inductive load, T J = 25°C I C = 60A, VGE = 15V V CE = 400V, RG = 5Ω Note 2 Inductive load, T J = 150°C I C = 60A, VGE = 15V V CE = 400V, RG = 5Ω Note 2 |
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