IXXH40N65B4H1 datasheet(1/8 Pages) IXYS

Part #	IXXH40N65B4H1

Description	XPTTM 650V IGBT

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Manufacturer	IXYS [IXYS Corporation]

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IXXH40N65B4H1

V

CES

= 650V

I

C110

= 40A

V

CE(sat) 



 2.0V

t

fi(typ)

= 54ns

DS100544B(12/14)

G = Gate

C

= Collector

E = Emitter

Tab = Collector

TO-247 AD

G

C

E

Tab

Extreme Light Punch Through

IGBT for 5-30 kHz Switching

Features



Optimized for 5-30kHz Switching



Square RBSOA



Anti-Parallel Sonic Diode



Avalanche Rated



Short Circuit Capability



International Standard Package

Advantages



High Power Density



Extremely Rugged



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250

A, V

GE = 0V

650

V

GE(th)

I

C

= 250

A, V

CE = VGE

4.0

6.5

V

I

CES

V

CE = VCES, VGE = 0V

50

A

T

J = 150C

3 mA

I

GES

V

CE = 0V, VGE = 20V

100 nA

V

CE(sat)

I

C

= 40A, V

GE = 15V, Note 1

1.50

2.00

V

T

J = 150C

1.78

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 175°C

650

V

CGR

T

J

= 25°C to 175°C, R

GE = 1M

650

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C

120

A

I

C110

T

C = 110°C

40

A

I

F110

T

C = 110°C

40

A

I

CM

T

C = 25°C, 1ms

240

A

SSOA

V

GE = 15V, TVJ = 150°C, RG = 10

I

CM = 80

A

(RBSOA)

Clamped Inductive Load

@V

CE  VCES

t

sc

V

GE = 15V, VCE = 360V, TJ = 150°C

10

μs

(SCSOA)

R

G = 82, Non Repetitive

P

C

T

C = 25°C

455

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque

1.13/10

Nm/lb.in

Weight

6g

XPTTM 650V IGBT

GenX4TM w/ Sonic

Diode

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