4

LM2672

SNVS136L – SEPTEMBER 1998 – REVISED JUNE 2016

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Copyright © 1998–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over recommended operating junction temperature range of –40°C to 125°C (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

45

V

–0.1

6

V

Switch voltage to ground

–1

V

Boost pin voltage

V

–0.3

14

V

Power dissipation

Internally limited

Lead temperature

D package

Vapor phase (60s)

215

°C

Infrared (15s)

220

P package (soldering, 10s)

260

150

°C

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2000

V

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage

6.5

40

V

Operating junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

Thermal resistances were simulated on 4-layer JEDEC board.

7.4 Thermal Information

LM2672

UNIT

D (SOIC)

P (PDIP)

WSON (NHN)

8 PINS

8 PINS

16 PINS

Junction-to-ambient thermal resistance

105

95

—

°C/W

Junction-to-case (top) thermal resistance

—

—

—

°C/W

Junction-to-board thermal resistance

—

—

—

°C/W

Junction-to-top characterization parameter

—

—

—

°C/W

Junction-to-board characterization parameter

—

—

—

°C/W

Junction-to-case (bottom) thermal resistance

—

—

—

°C/W