IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY4N65X2

IXTA4N65X2

IXTP4N65X2

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

4

A

I

SM

Repetitive, pulse Width Limited by T

JM

16

A

V

SD

I

1.4

V

t

rr

160

ns

Q

RM

890

nC

I

RM

11.4

A

I

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

2.5

4.2

S

R

Gi

Gate Input Resistance

13



C

iss

455

pF

C

oss

V

294

pF

C

rss

0.8

pF

C

o(er)

32

pF

C

o(tr)

82

pF

t

d(on)

22

ns

t

r

28

ns

t

d(off)

57

ns

t

f

25

ns

Q

g(on)

8.3

nC

Q

gs

V

2.0

nC

Q

gd

3.0

nC

R

thJC

1.56

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Effective Output Capacitance

Energy related

Time related

V

V