I

XYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTP32N65X IXTQ32N65X

IXTH32N65X

Fig. 8. Input Admittance

0

5

10

15

20

25

30

35

40

45

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

8.5

25ºC

- 40ºC

Fig. 7. Maximum Drain Current vs.

Case Temperature

0

5

10

15

20

25

30

35

-50

-25

0

25

50

75

100

125

150

Fig. 9. Transconductance

0

5

10

15

20

25

30

35

40

0

5

10

15

20

25

30

35

40

45

50

125ºC

25ºC

Fig. 10. Forward Voltage Drop of Intrinsic Diode

0

10

20

30

40

50

60

70

80

90

100

0.40.5

0.60.7

0.80.9

1.01.1

Fig. 11. Gate Charge

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

45

50

55

Fig. 12. Capacitance

1

10

100

1,000

10,000

1

10

100

1000

f = 1 MHz

Ciss

Crss

Coss