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SLK2501IPZP Datasheet(PDF) 2 Page - Texas Instruments |
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SLK2501IPZP Datasheet(HTML) 2 Page - Texas Instruments |
2 / 22 page www.ti.com DESCRIPTION (CONTINUED) BLOCK DIAGRAM SLK2501 SLLS502C – OCTOBER 2001 – REVISED MARCH 2007 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. The device comes in a 100-pin VQFP package that requires a single 2.5-V supply with 3.3-V tolerant inputs on the control pins. The SLK2501 device is very power efficient, dissipating less than 900 mW at 2.488 Gbps, the OC-48 data rate. It is characterised for operation from –40 °C to 85°C. 2 Submit Documentation Feedback |
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