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IXA30PG1200DHGLB Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXA30PG1200DHGLB
Description  XPT IGBT phaseleg
Download  5 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXA30PG1200DHGLB Datasheet(HTML) 1 Page - IXYS Corporation

  IXA30PG1200DHGLB Datasheet HTML 1Page - IXYS Corporation IXA30PG1200DHGLB Datasheet HTML 2Page - IXYS Corporation IXA30PG1200DHGLB Datasheet HTML 3Page - IXYS Corporation IXA30PG1200DHGLB Datasheet HTML 4Page - IXYS Corporation IXA30PG1200DHGLB Datasheet HTML 5Page - IXYS Corporation  
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© 2012 IXYS All rights reserved
1 - 5
20120131b
IXA 30PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
I
C25
=
43 A
V
CES
= 1200 V
V
CE(sat) typ =
1.9 V
XPT IGBT phaseleg
ISOPLUS™
Surface Mount Power Device
Features
• XPT IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• Sonicdiode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• V
CEsat detection diode
- integrated into package
- very fast diode
• Package
- isolated back surface
- low coupling capacity between pins
and heatsink
- PCB space saving
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
Applications
• Phaseleg
- buck-boost chopper
• Full bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• Three phase bridge
- AC drives
- controlled rectifier
IGBTs S1, S2
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
1200
V
V
GES
±20
V
I
C25
I
C80
T
C = 25°C
T
C = 80°C
43
30
A
A
I
CM
V
CEK
V
GE = 15 V; RG = 39 W; TVJ = 125°C
RBSOA, clamped inductive load; L = 100 µH
75
V
CES
A
t
SC
(SCSOA)
V
CE = 900 V; VGE = ±15 V; RG = 39 W; TVJ = 125°C
none repetitive
10
µs
P
tot
T
C = 25°C
150
W
Symbol
Conditions
Characteristic
Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 25 A; VGE = 15 V;
T
VJ =
25°C
T
VJ = 125°C
1.9
2.2
2.2
V
V
V
GE(th)
I
C = 1 mA; VGE = VCE
5.4
6.5
V
I
CES
V
CE = VCES; VGE = 0 V;
T
VJ =
25°C
T
VJ = 125°C
200
2.1
mA
µA
I
GES
V
CE = 0 V ; VGE = ± 20 V
500
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
(rec)off
Inductive load; T
VJ = 125°C
V
CE = 600 V; IC = 25 A
V
GE = ±15 V; RG = 39 W
70
40
250
100
2.5
3.0
tbd
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE = 25 V; VGE = 0 V; f = 1 MHz
V
CE = 600 V; VGE = 15 V; IC = 25 A
tbd
76
pF
nC
R
thJC
R
thJH
with heatsink compound (IXYS test setup)
0.95
0.85
1.3
K/W
K/W
6
1
3
4
2
7
8
5
9
D3
D4
D1
D2
S1
S2
E72873
8
6 5
4
7
9
3 2
1
Isolated
surf
ace
to heatsink


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