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IXA30PG1200DHGLB Datasheet(PDF) 1 Page - IXYS Corporation |
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IXA30PG1200DHGLB Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 5 page © 2012 IXYS All rights reserved 1 - 5 20120131b IXA 30PG1200DHGLB IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information I C25 = 43 A V CES = 1200 V V CE(sat) typ = 1.9 V XPT IGBT phaseleg ISOPLUS™ Surface Mount Power Device Features • XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • Sonic™ diode - fast reverse recovery - low operating forward voltage - low leakage current • V CEsat detection diode - integrated into package - very fast diode • Package - isolated back surface - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability Applications • Phaseleg - buck-boost chopper • Full bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • Three phase bridge - AC drives - controlled rectifier IGBTs S1, S2 Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 1200 V V GES ±20 V I C25 I C80 T C = 25°C T C = 80°C 43 30 A A I CM V CEK V GE = 15 V; RG = 39 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH 75 V CES A t SC (SCSOA) V CE = 900 V; VGE = ±15 V; RG = 39 W; TVJ = 125°C none repetitive 10 µs P tot T C = 25°C 150 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 25 A; VGE = 15 V; T VJ = 25°C T VJ = 125°C 1.9 2.2 2.2 V V V GE(th) I C = 1 mA; VGE = VCE 5.4 6.5 V I CES V CE = VCES; VGE = 0 V; T VJ = 25°C T VJ = 125°C 200 2.1 mA µA I GES V CE = 0 V ; VGE = ± 20 V 500 nA t d(on) t r t d(off) t f E on E off E (rec)off Inductive load; T VJ = 125°C V CE = 600 V; IC = 25 A V GE = ±15 V; RG = 39 W 70 40 250 100 2.5 3.0 tbd ns ns ns ns mJ mJ C ies Q Gon V CE = 25 V; VGE = 0 V; f = 1 MHz V CE = 600 V; VGE = 15 V; IC = 25 A tbd 76 pF nC R thJC R thJH with heatsink compound (IXYS test setup) 0.95 0.85 1.3 K/W K/W 6 1 3 4 2 7 8 5 9 D3 D4 D1 D2 S1 S2 E72873 8 6 5 4 7 9 3 2 1 Isolated surf ace to heatsink |
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