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DS90UH927Q-Q1 Datasheet(PDF) 5 Page - Texas Instruments |
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DS90UH927Q-Q1 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 68 page  DS90UH927Q-Q1 www.ti.com SNLS433C – NOVEMBER 2012 – REVISED JANUARY 2015 Pin Functions (continued) PIN I/O, TYPE DESCRIPTION NAME NO. POWER AND GROUND(1) GND DAP Ground Large metal contact at the bottom center of the device package Connect to the ground plane (GND) with at least 9 vias. VDD33_A 19 Power Power to on-chip regulator 3.0 V - 3.6 V. Each pin requires a 4.7 µF capacitor to GND VDD33_B 26 VDDIO 7, 24 Power LVCMOS I/O Power 1.8 V ±5% OR 3.0 V - 3.6 V. Each pin requires 4.7 µF capacitor to GND REGULATOR CAPACITOR CAPP12 12 CAP Decoupling capacitor connection for on-chip regulator CAPHS12 14 Each requires a 4.7-µF decoupling capacitor to GND. CAPLVD12 28 CAPL12 8 CAP Decoupling capacitor connection for on-chip regulator Requires two 4.7-µF decoupling capacitors to GND OTHER RES[1:0] 15, 13 GND Reserved Connect to GND. (1) The VDD (VDD33 and VDDIO) supply ramp should be faster than 1.5 ms with a monotonic rise. 6 Specifications 6.1 Absolute Maximum Ratings (1) (2) (3) MIN MAX UNIT Supply Voltage – VDD33 (4) −0.3 4.0 V Supply Voltage – VDDIO (4) −0.3 4.0 V LVCMOS I/O Voltage (VDDIO + −0.3 0.3) V Serializer Output Voltage −0.3 2.75 V Junction Temperature 150 °C Storage Temperature, Tstg −65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) For soldering specifications, see product folder at www.ti.com and www.ti.com/lit/an/snoa549c/snoa549c.pdf. (3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. (4) The DS90UH927Q-Q1 VDD33 and VDDIO voltages require a specific ramp rate during power up. The power supply ramp time must be less than 1.5 ms with a monotonic rise 6.2 ESD Ratings VALUE UNIT Human body model (HBM), per AEC Q100-002(1) ±8000 Charged device model (CDM), per AEC Q100-011 ±1250 V Machine model (MM) ±250 (IEC 61000-4-2, powered-up only) Air Discharge RD = 330 Ω, CS = 150 pF (Pin 16 and 17) ±15000 Electrostatic V(ESD) Contact Discharge discharge (Pin 16 and 17) ±8000 V (ISO 10605) Air Discharge RD = 330 Ω, CS = 150 pF/330 pF (Pin 16 and 17) ±15000 RD = 2 kΩ, CS = 150 pF/330 pF Contact Discharge (Pin 16 and 17) ±8000 (1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification. Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: DS90UH927Q-Q1 |
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