DS90UB925Q-Q1

SNLS407D – APRIL 2012 – REVISED OCTOBER 2014

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6.4 Thermal Information

WQFN

UNIT

48 PINS

Junction-to-ambient thermal resistance

35

Junction-to-case (top) thermal resistance

5.2

Junction-to-board thermal resistance

5.5

°C/W

Junction-to-top characterization parameter

0.1

Junction-to-board characterization parameter

5.5

Junction-to-case (bottom) thermal resistance

1.3

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 DC Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.

(1) (2) (3)

PARAMETER

TEST CONDITIONS

PIN/FREQ.

MIN

TYP

MAX

UNIT

LVCMOS I/O DC SPECIFICATIONS

High Level Input

2.0

V

Voltage

Low Level Input

PDB

GND

0.8

V

Voltage

Input Current

−10

±1

+10

μA

2.0

V

High Level Input

0.65*

Voltage

V

DIN[23:0], HS,

GND

0.8

V

Low Level Input

VS, DE, PCLK,

0.35*

Voltage

I2S_CLK,

GND

V

I2S_WC,

I2S_DA, I2S_DB

−10

±1

+10

μA

to 3.6V

Input Current

−10

±1

+10

μA

to 1.89V

2.4

V

3.6V

High Level Output

Voltage

V

to 1.89V

GND

0.4

V

3.6V

Low Level Output

GPIO[3:0],

Voltage

GPO_REG[8:4]

GND

0.35

V

to 1.89V

Output Short Circuit

−50

mA

Current

TRI-STATE® Output

−10

+10

μA

Current

(1)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and

are not ensured.

(2)

the time of product characterization and are not ensured.

(3)

Current into device pins is defined as positive. Current out of a device pin is defined as negative. Voltages are referenced to ground

8

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