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DS90UB902Q Datasheet(PDF) 7 Page - Texas Instruments |
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DS90UB902Q Datasheet(HTML) 7 Page - Texas Instruments |
7 / 50 page DS90UB901Q, DS90UB902Q www.ti.com SNLS322E – JUNE 2010 – REVISED APRIL 2013 Absolute Maximum Ratings (1) (2) (3) Supply Voltage – VDDn (1.8V) −0.3V to +2.5V Supply Voltage – VDDIO −0.3V to +4.0V LVCMOS Input Voltage I/O Voltage −0.3V to + (VDDIO + 0.3V) CML Driver I/O Voltage (VDD) −0.3V to +(VDD + 0.3V) CML Receiver I/O Voltage (VDD) −0.3V to (VDD + 0.3V) Junction Temperature +150°C Storage Temperature −65°C to +150°C Maximum Package Power Dissipation Capacity Package 1/ θJA °C/W above +25° Package Derating: θJA(based on 9 thermal vias) 34.3 °C/W DS90UB901Q 32 Lead WQFN θJC(based on 9 thermal vias) 6.9 °C/W θJA(based on 16 thermal vias) 28.0 °C/W DS90UB902Q 40 Lead WQFN θJC(based on 16 thermal vias) 4.4 °C/W ESD Rating (IEC 61000-4-2) RD = 330Ω, CS = 150pF Air Discharge (DOUT+, DOUT-, RIN+, RIN-) ≥±25 kV Contact Discharge (DOUT+, DOUT-, RIN+, RIN-) ≥±10 kV ESD Rating (ISO10605) RD = 330Ω, CS = 150/330pF ESD Rating (ISO10605) RD = 2KΩ, CS = 150/330pF Air Discharge (DOUT+, DOUT-, RIN+, RIN-) ≥±15 kV Contact Discharge (DOUT+, DOUT-, RIN+, RIN-) ≥±10 kV ESD Rating (HBM) ≥±8 kV ESD Rating (CDM) ≥±1 kV ESD Rating (MM) ≥±250 V (1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional; the device should not be operated beyond such conditions. (2) For soldering specifications see product folder at www.ti.com (3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. Recommended Operating Conditions (1) Min Nom Max Units Supply Voltage (VDDn) 1.71 1.8 1.89 V LVCMOS Supply Voltage (VDDIO) 1.71 1.8 1.89 V OR LVCMOS Supply Voltage (VDDIO) 3.0 3.3 3.6 V VDDn (1.8V) 25 mVp-p Supply Noise VDDIO (1.8V) 25 mVp-p VDDIO (3.3V) 50 mVp-p Operating Free Air Temperature (TA) -40 +25 +105 °C PCLK Clock Frequency 10 43 MHz (1) Supply noise testing was done with minimum capacitors (as shown on Figure 39 and Figure 40) on the PCB. A sinusoidal signal is AC coupled to the VDDn (1.8V) supply with amplitude = 25 mVp-p measured at the device VDDn pins. Bit error rate testing of input to the Ser and output of the Des with 10 meter cable shows no error when the noise frequency on the Ser is less than 1 MHz. The Des on the other hand shows no error when the noise frequency is less than 750 kHz. Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: DS90UB901Q DS90UB902Q |
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