DS90C363B

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SNLS179F – APRIL 2004 – REVISED APRIL 2013

Electrical Characteristics

(1)

Over recommended operating supply and temperature ranges unless otherwise specified.

Symbol

Parameter

Conditions

Min

Max

Unit

CMOS/TTL DC SPECIFICATIONS

High Level Input Voltage

2.0

V

Low Level Input Voltage

GND

0.8

V

Input Clamp Voltage

−0.79

−1.5

V

Input Current

+1.8

+10

μA

−10

0

μA

LVDS DC SPECIFICATIONS

Differential Output Voltage

250

345

450

mV

35

mV

output states

1.13

1.25

1.38

V

35

mV

output states

Output Short Circuit Current

−3.5

−5

mA

Power Down = 0V,

±1

±10

μA

TRANSMITTER SUPPLY CURRENT

ICCTW

Transmitter Supply Current, Worst Case

f = 25MHz

29

40

mA

f = 40 MHz

34

45

mA

Worst Case Pattern

f = 65 MHz

42

55

mA

(Figure 2 Figure 5 ) "Typ"

"Max" values are given for

ICCTG

Transmitter Supply Current, 16 Grayscale

f = 25 MHz

28

40

mA

f = 40 MHz

32

45

mA

16 Grayscale Pattern

f = 65 MHz

39

50

mA

(Figure 3 Figure 5 ) "Typ"

"Max" values are given for

ICCTZ

Transmitter Supply Current, Power Down

Power Down = Low

11

150

μA

Power Down Mode

(1)

Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground

(2)

(3)

Recommended Transmitter Input Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified

Symbol

Parameter

Min

Typ

Max

Unit

TCIT

TxCLK IN Transition Time (Figure 6 )

5

ns

TCIP

TxCLK IN Period (Figure 7 )

14.7

T

50

ns

TCIH

TxCLK IN High Time (Figure 7 )

0.35T

0.5T

0.65T

ns

TCIL

TxCLK IN Low Time (Figure 7 )

0.35T

0.5T

0.65T

ns

TXIT

TxIN, and Power Down pin transition Time

1.5

6.0

ns

TXPD

Minimum pulse width for Power Down pin signal

1

μs

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