DMP3056L

Document number: DS37386 Rev. 3 - 2

2 of 6

www.diodes.com

February 2016

© Diodes Incorporated

DMP3056L

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

25

V

Steady

State

-4.3

-3.4

A

Pulsed Drain Current (Note 6)

-20

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.38

W

Thermal Resistance, Junction to Ambient (Note 5)

91

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-30





V

Zero Gate Voltage Drain Current





-1

µA

Gate-Source Leakage





100

800

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1



-2.1

V

Static Drain-Source On-Resistance





35

50

50

70

m



Diode Forward Voltage





-1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



642



pF

Output Capacitance



65



pF

Reverse Transfer Capacitance



48



pF

Gate Resistance



15







5.8



nC



11.8



nC

Gate-Source Charge



2.0



Gate-Drain Charge



2.4



Turn-On Delay Time



4.9



ns

Rise Time



4.7



Turn-Off Delay Time



35.2



Fall Time



18.2



Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

6. Pulse width

≤10µS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.