DMP2100UCB9

Document number: DS35725 Rev. 5 - 2

1 of 6

www.diodes.com

May 2015

© Diodes Incorporated

DMP2100UCB9

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

-20V

80m

Ω

3.3nC

0.6nC

-4A

Description

This new generation MOSFET is designed to minimize the on-state

resistance

and

yet

maintain

superior

switching

performance, making it ideal for high-efficiency power management

applications.

Applications



Battery Management



Load Switch



Battery Protection

Features and Benefits



LD-MOS Technology with the Lowest Figure of Merit:





CSP with Footprint 1.5mm × 1.5mm



Height = 0.62mm for Low Profile



ESD = 3kV HBM Protection of Gate



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)



Halogen and Antimony Free. “Green” Device (Note 3)



Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data



Case: U-WLB1515-9



Terminal Connections: See Diagram Below



Weight: 0.0018 grams (Approximate)

Part Number

Case

Packaging

DMP2100UCB9-7

U-WLB1515-9

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html

for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-

free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

U-WLB1515-9

Date Code Key

Year

2012

2013

2014

2015

2016

2017

2018

Code

Z

A

B

C

D

E

F

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

6W = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

6W

YM

ESD PROTECTED TO 3kV

G1

D1

D1

SS

D2

D1

G2

D2

D2