DRV3210-Q1 datasheet(8/38 Pages) TI1

Part #	DRV3210-Q1

Description	DRV3210-Q1 Three-Phase Brushless Motor Driver

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Manufacturer	TI1 [Texas Instruments]

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8 / 38 page

Not Recommended for New Designs

8

DRV3210-Q1

SLVSC08B – MAY 2013 – REVISED JULY 2016

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Product Folder Links: DRV3210-Q1

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Electrical Characteristics (continued)

VB = 12 V, TA = –40°C to +125℃ (unless otherwise specified)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OVADth

Overcurrent threshold

Rshunt = 1 mΩ, VGain = 30, AREF

= 1 V, ADTH = 2.5 V,

SPI register FLTCFG. MTOCTH,

OVADth = (2 × ADTH -- AREF) /

(Rshunt × VGain)

119.7

133

146.3

A

TDEL_OV

AD

Propagation delay

(rise or fall)

-

1.5

µs

tfiltMTOC

filtering time

OSC1 = 9 MHz-11 MHz

0.8

1

1.2

µs

VCC

VCC1

Output Voltage

4.9

5

5.1

V

VCC2

Output Voltage

VB = 4.5 V, ILVCC = 50 mA

4.1

4.5

V

ILVCC

Load Current

50

-

mA

VLRVCC

Load regulation

ILVCC = 50 mA

–50

-

50

mV

CVCC

External Capacitance

10

µF

VCCUV

Under voltage detection threshold

SPI register FLTCFG. VCCUVTH

3.7

3.9

4

4.2

4.3

4.5

V

VCCUVHY

S

Under voltage detection threshold

hysteresis

50

100

200

mV

VCCOV

Overvoltage detection threshold

6

6.5

7

V

VCCOC

Current Limit

100

150

300

mA

Tvcc1

Rise Time

VCC > VCCUV, CVCC = 10 µF

0.5

ms

VDD

Output Voltage

3

3.3

3.6

V

CVDD

Load Capacitance

1

µF

VDDUV

Under voltage detection threshold

2.1

2.3

2.5

V

VDDOV

Overvoltage detection threshold

4

4.3

4.6

V

Tvdd

Rise Time

VDD > VDDUV, CVDD=1µF

100

µs

VB MONITOR

VBOV

VB overvoltage detection threshold

level

26.5

27.5

28.5

V

VBUV

VB Undervoltage detection threshold

level

SPI register FLTCFG. VBUVTH

3.65

4.15

4.65

5.15

4

4.5

5

5.5

4.35

4.85

5.35

5.85

V

THERMAL SHUT DOWN

TSD

Thermal shut down threshold level

155

175

195

°C

TSDhys

Thermal shut down hysteresis

5

10

15

°C

OSCILLATOR

OSC1

OSC1 frequency

9

10

11

MHz

OSC2

OSC2 frequency

10

MHz

INPUT BUFFER1

VIH

Input threshold logic high

0.7 × VCC

V

VIL

Input threshold logic low

0.3 × VCC

V

Ru or Rd

Input pullup or pulldown resistance

50

100

150

kΩ

OUTPUT BUFFER1(2)

VOH

Output level logic high

Isink = 2.5 mA

0.9 × VCC

V

VOL

Output level logic low

Isource = 2.5 mA

0.1 × VCC

V

OUTPUT BUFFER3

R_RES

Pull up Resistor

2

3

4

kΩ

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DRV3210-Q1 Datasheet(PDF) 8 Page - Texas Instruments

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