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CSD19538Q3AT Datasheet(PDF) 4 Page - Texas Instruments |
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CSD19538Q3AT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 13 page GATE Source DRAIN M0161-01 GATE Source DRAIN M0161-02 4 CSD19538Q3A SLPS583 – MAY 2016 www.ti.com Product Folder Links: CSD19538Q3A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Max RθJA = 55°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. Max RθJA = 195°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Figure 1. Transient Thermal Impedance |
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