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CSD19535KTT Datasheet(PDF) 3 Page - Texas Instruments |
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CSD19535KTT Datasheet(HTML) 3 Page - Texas Instruments |
3 / 12 page CSD19535KTT www.ti.com SLPS539A – MARCH 2015 – REVISED MAY 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 100 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 80 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.2 2.7 3.4 V VGS = 6 V, ID = 100 A 3.2 4.1 m Ω RDS(on) Drain-to-source on-resistance VGS = 10 V, ID = 100 A 2.8 3.4 m Ω gfs Transconductance VDS = 10 V, ID = 100 A 301 S DYNAMIC CHARACTERISTICS Ciss Input capacitance 6100 7930 pF Coss Output capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 1160 1510 pF Crss Reverse transfer capacitance 29 38 pF RG Series gate resistance 1.4 2.8 Ω Qg Gate charge total (10 V) 75 98 nC Qgd Gate charge gate-to-drain 11 nC VDS = 50 V, ID = 100 A Qgs Gate charge gate-to-source 25 nC Qg(th) Gate charge at Vth 16 nC Qoss Output charge VDS = 50 V, VGS = 0 V 210 nC td(on) Turn on delay time 9 ns tr Rise time 18 ns VDS = 50 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω td(off) Turn off delay time 21 ns tf Fall time 15 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V Qrr Reverse recovery charge 435 nC VDS= 50 V, IF = 100 A, di/dt = 300 A/ μs trr Reverse recovery time 85 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.5 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD19535KTT |
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