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DS125DF111SQ Datasheet(PDF) 6 Page - Texas Instruments |
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DS125DF111SQ Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 54 page  DS125DF111 SNLS450A – JANUARY 2014 – REVISED JUNE 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Supply Voltage (VDD) –0.5 2.75 V Supply Voltage (VIN) –0.5 4 V LVCMOS Input/Output Voltage –0.5 4 V 4-Level Input Voltage (2.5-V mode) –0.5 2.75 V 4-Level Input Voltage (3.3-V mode) –0.5 4 V SMBus Input/Output Voltage –0.5 4 V CML Input Voltage –0.5 VDD + 0.5 V CML Input Current –30 30 mA Storage temperature, Tstg –40 125 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. (2) Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. For soldering specifications, see product folder at SNOA549. 6.2 ESD Ratings VALUE UNIT Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all ±3000 pins(1) V(ESD) Electrostatic discharge V Charged device model (CDM), per JEDEC specification JESD22- ±1500 C101, all pins(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN NOM(1) MAX UNIT 2.5 V Mode 2.375 2.5 2.625 Supply Voltage V 3.3 V Mode 3 3.3 3.6 Ambient Temperature –40 25 +85 °C SMBus (SDA, SCL) Pull-up Supply Voltage 2.7 3.3 3.6 V (1) Typical values represent the most likely parametric norm as determined at the time of design and characterization. Actual typical values may vary over time and will also depend on the application and configuration. 6.4 Thermal Information DS125DF111 THERMAL METRIC(1) RTW (WQFN) UNIT 24 PINS RθJA Junction-to-ambient thermal resistance 35 °C/W RθJC(top) Junction-to-case (top) thermal resistance 34 °C/W RθJB Junction-to-board thermal resistance 13.4 °C/W ψJT Junction-to-top characterization parameter 0.3 °C/W ψJB Junction-to-board characterization parameter 13.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 3.3 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: DS125DF111 |
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