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XS4202 Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # XS4202
Description  20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

XS4202 Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

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®
XS4202
Pb Free Plating Product
XS4202
20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine
Pb
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
APPLICATION
GENERAL DESCRIPTION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
PRODUCT FEATURE
XS4202 using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine.
TO-3PF/TO-3PML
Internal Configuration
Cathode
Anode
Base Backside
Anode
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
Page 1/3
Rev.05
Unit
ABSOLUTE MAXIMUM RATINGS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
VR
Maximum D.C. Reverse Voltage
210
V
V
M i
R
titi
R
V lt
W
°C
°C
N•m
°C /W
g
Unit
μA
mA
ns
ns
A
ns
A
V
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Forward Current
TC=110°C, Per Diode
10
A
TC=110°C, Per Package
20
IF(RMS)
RMS Forward Current
TC=110°C, Per Diode
14
IFSM
Non-Repetitive Surge Forward Current
TJ=45°C,t=10ms, 50Hz, Sine
100
PD
Power Dissipation
83
TJ
Junction Temperature
-55 to +150
TSTG
Storage Temperature Range
-55 to +150
Torque
Module-to-Sink
Recommended(M3)
1.1
Rth(J-C)
Junction-to-Case Thermal Resistance, Per Diode
1.5
Weight
5.2
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max.
10
VR =220V, TJ = 125°C
10
VF
Forward Voltage
IF=10A
0.9
1.1
IRM
Maximum Reverse Leakage Current
VR =220V
V
IF=10A,TJ=125°C
0.95
trr
Reverse Recovery Time (IF = 1A, diF/dt = -200A/μs, VR = 30V)
17
trr
Reverse Recovery Time
IF =10A,VR =100V,
32
IRRM
Maximum Reverse Recovery Current
diF/dt = -200A/μs
2.1
trr
Reverse Recovery Time
IF = 10A,VR =100V,
45
IRRM
Maximum Reverse Recovery Current
diF/dt = -200A/μs ,TJ=125°C
5
0.8


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