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XS4202 Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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XS4202 Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 3 page ® XS4202 Pb Free Plating Product XS4202 20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine Pb · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current APPLICATION GENERAL DESCRIPTION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS PRODUCT FEATURE XS4202 using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine. TO-3PF/TO-3PML Internal Configuration Cathode Anode Base Backside — — — — — — — — — — Anode © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3 Rev.05 Unit ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VR Maximum D.C. Reverse Voltage 210 V V M i R titi R V lt W °C °C N•m °C /W g Unit μA mA ns ns A ns A V VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Forward Current TC=110°C, Per Diode 10 A TC=110°C, Per Package 20 IF(RMS) RMS Forward Current TC=110°C, Per Diode 14 IFSM Non-Repetitive Surge Forward Current TJ=45°C,t=10ms, 50Hz, Sine 100 PD Power Dissipation 83 TJ Junction Temperature -55 to +150 TSTG Storage Temperature Range -55 to +150 Torque Module-to-Sink Recommended(M3) 1.1 Rth(J-C) Junction-to-Case Thermal Resistance, Per Diode 1.5 Weight 5.2 ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. 10 VR =220V, TJ = 125°C 10 VF Forward Voltage IF=10A 0.9 1.1 IRM Maximum Reverse Leakage Current VR =220V V IF=10A,TJ=125°C 0.95 trr Reverse Recovery Time (IF = 1A, diF/dt = -200A/μs, VR = 30V) 17 trr Reverse Recovery Time IF =10A,VR =100V, 32 IRRM Maximum Reverse Recovery Current diF/dt = -200A/μs 2.1 trr Reverse Recovery Time IF = 10A,VR =100V, 45 IRRM Maximum Reverse Recovery Current diF/dt = -200A/μs ,TJ=125°C 5 0.8 |
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