IRF740PBF datasheet(3/6 Pages) THINKISEMI

Part #	IRF740PBF

Description	10A,400V Heatsink N-Channel Type Power MOSFET

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Manufacturer	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Direct Link	http://www.thinkisemi.com

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3 / 6 page

0

5

10

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25

30

35

40

0

500

1000

1500

2000

2500

3000

C

iss=Cgs+Cgd(Cds=shorted)

C

oss=Cds+Cgd

C

rss=Cgd

Notes :

※

1. V

GS = 0V

2. f=1MHz

C

iss

C

oss

C

rss

V

DS, Drain-Source Voltage [V]

23

456

7

8

9

10

-1

10

0

10

1

V

GS, Gate-Source Voltage [V]

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 50V

2. 250μ s Pulse Test

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

-1

10

0

10

1

V

SD, Source-Drain Voltage [V]

Notes :

※

1. V

GS = 0V

2. 250μ s Pulse Test

150℃

25℃

0

102030405060

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 400V

Note : I

※

D = 8 A

Q

G, Total Gate Charge [nC]

0

5

10

15

20

25

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

I

D, Drain Current [A]

V

GS = 20V

V

GS = 10V

10

-1

10

0

10

1

10

-1

10

0

10

1

V

DS, Drain-Source Voltage [V]

Top :

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom : 4.5V

Fig 3. On Resistance Variation vs.

Drain Current and Gate Voltage

Fig 4. On State Current vs.

Allowable Case Temperature

Fig 5. Capacitance Characteristics

Fig 6. Gate Charge Characteristics

Fig 1. On-State Characteristics

Fig 2. Transfer Characteristics

®

IRF740PBF

http://www.thinkisemi.com/

Page 3/6

Rev.05

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