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CC2545RGZR Datasheet(PDF) 2 Page - Texas Instruments |
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CC2545RGZR Datasheet(HTML) 2 Page - Texas Instruments |
2 / 31 page CC2545 SWRS106B – JUNE 2012 – REVISED FEBRUARY 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. DESCRIPTION The CC2545 is an optimized system-on-chip (SoC) solution with data rates up to 2Mbps built with low bill-of- material cost. The CC2545 combines the excellent performance of a leading RF transceiver with a single-cycle 8051 compliant CPU, 32-KB in-system programmable flash memory, up to 1-KB RAM, 31 General-Purpose I/O pins and many other powerful features. The CC2545 has efficient power modes with RAM and register retention below 1 μA, making it highly suited for low-duty-cycle systems where ultralow power consumption is required. Short transition times between operating modes further ensure low energy consumption. The CC2545 is compatible with the CC2541/CC2543/CC2544. It comes in a 7-mm × 7-mm QFN48 package, with SPI/UART/I2C interface. The CC2545 comes complete with reference designs from Texas Instruments. The device targets wireless consumer and HID applications. The CC2545 is tailored for peripheral devices such as wireless keyboards. For block diagram, see Figure 7 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN MAX UNIT Supply voltage VDD All supply pins must have the same voltage –0.3 3.9 V Voltage on any digital pin –0.3 VDD+0.3 <= 3.9 V Input RF level 10 dBm Storage temperature range –40 125 °C All pads, according to human-body model, JEDEC 2000 V STD 22, method A114 (HBM) ESD(2) According to charged-device model, JEDEC STD 750 V 22, method C101 (CDM) (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) CAUTION: ESD sensitive device. Precaution should be used when handing the device in order to prevent permanent damage. RECOMMENDED OPERATING CONDITIONS PARAMETER TEST CONDITIONS MIN MAX UNIT Operating ambient temperature range, TA –40 85 °C Operating supply voltage VDD All supply pins must have same voltage 2.0 3.6 V 2 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated |
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