2SK3560

2

SJG00033AED

Safe operation area

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Total gate charge

51.2

nC

Gate-source charge

= 10 V

8.2

nC

Gate-drain charge

19.4

nC

Channel-case heat resistance

2.5

°C/W

Channel-atmosphere heat resistance

89.2

°C/W

■ Electrical Characteristics (Continued) T

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

110

1

10

Non repetitive pulse

= 25°C

t

= 100 µs

1 ms

10 ms

Drain-source voltage V

0

50

150

100

Ambient temperature T

= T

a

(2) Without heat sink

(1)

(2)

0

100

80

60

40

20