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2SK3444 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK3444
Description  Switching Regulator, DC-DC Converter Applications Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3444 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK3444
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3444
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = 100 µA (VDS = 200 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
25
Drain current
Pulse (Note 1)
IDP
100
A
Drain power dissipation (Tc
= 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
488
mJ
Avalanche current
IAR
25
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.00
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, IAR = 25 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
Unit: mm
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
1
2
3
4
K3444
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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