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2SK3079A Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3079A Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SK3079A 2002-01-09 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications · Output power: Po = 33.50dBmW (2.2 W) (min) · Gain: Gp = 13.50dB (min) · Drain Efficiency: ηD = 50.0% (min) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 10 V Gate-source voltage VGSS 3 V Drain current ID 3 A Power dissipation PD (Note 1) 20.0 W Channel temperature Tch 150 °C Storage temperature range Tstg −45~150 °C Note 1: Tc = 25°C Marking Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output power PO 33.5 ¾ ¾ dBmW Drain efficiency ηD 50.0 ¾ ¾ % Power gain Gp VDS = 4.5 V, Iidle = 50 mA (VGS = adjust) f = 470 MHz, Pi = 20dBmW ZG = ZL = 50 Ω 13.5 ¾ ¾ dB Threshold voltage Vth VDS = 4.5 V, ID = 0.5 mA ¾ 0.8 ¾ V Drain cut-off current IDSS VDS = 10 V, VGS = 0 V ¾ ¾ 10 µA Gate-source leakage current IGSS VGS = 5 V, VDS = 0 V ¾ ¾ 5 µA Load mismatch (Note 2) ¾ VDS = 5 V, f = 470 MHz, Pi = 20dBmW, Po = 33.5dBmW (VGS = adjust) VSWR LOAD 10:1 all phase No degradation ¾ Caution: This is transistor the electrostatic sensitive device. Please handle with caution. Note 2: When the RF output power test fixture is used Unit: mm JEDEC ― JEITA ― TOSHIBA 2-5N1A Preliminary UD F ** Type Name Dot Lot No. |
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