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IRFP150FI Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRFP150FI Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRFP150FI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 22A 0.055 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0 250 μA VSD Forward On-Voltage IS= 23A; VGS= 0 2.5 V · PDF pdfFactory Pro www.fineprint.cn |
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