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2SC5810 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC5810 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page 2SC5810 2004-07-07 3 Collector-emitter voltage VCE (V) IC − VCE Collector current IC (A) hFE − IC Collector current IC (A) VCE (sat) − IC Collector current IC (A) VBE (sat) − IC Base-emitter voltage VBE (V) IC – VBE 0 0.4 0.6 1 0.2 0.8 IB = 1 mA 10 8 6 4 2 15 20 0 1.2 0.8 0.4 0.2 0.6 1 0 Common emitter Ta = 25 °C Single nonrepetitive pulse hFE − IC 100 1000 30 10000 Ta = 100°C −55 25 0.001 1 0.1 0.01 0.003 0.03 0.3 Common emitter VCE = 2 V Single nonrepetitive pulse 0.1 0.3 0.03 1 0.001 1 0.1 0.01 0.003 0.03 0.3 Ta = 100°C 25 −55 0.01 0.003 Common emitter IC/IB = 50 Single nonrepetitive pulse Ta = 100°C −55 25 1 3 0.3 10 0.03 0.001 1 0.1 0.01 0.003 0.03 0.3 0.1 Common emitter IC/IB = 50 Single nonrepetitive pulse 0 1.2 0.8 0.4 0.2 0.6 1.0 0 0.4 0.6 0.2 0.8 1.0 Common emitter VCE = 2 V Single nonrepetitive pulse |
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