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DMP1045UFY4 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP1045UFY4 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMP1045UFY4 Document number: DS31853 Rev. 7 - 2 2 of 6 www.diodes.com September 2012 © Diodes Incorporated DMP1045UFY4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current VGS = -4.5V (Note 6) Steady State TA = +25°C TA = +70°C ID -5.5 -4.3 A t<5s TA = +25°C TA = +70°C -6.5 -5.1 A Maximum Continuous Body Diode Forward Current (Note 6) IS -2.2 A Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM -25 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) TA = +25°C PD 0.7 W TA = +70°C 0.4 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 193 °C/W t<5s 135 Power Dissipation (Note 6) TA = +25°C PD 1.7 W TA = +70°C 1.1 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 73 °C/W t<5s 52 Thermal Resistance, Junction to Case (Notes 6) Steady state RθJC 17 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -12 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -1.0 μA VDS = -12V, VGS = 0V Gate-Source Leakage IGSS - - ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.3 -0.55 -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 26 32 m Ω VGS = -4.5V, ID = -4.0A 31 45 VGS = -2.5V, ID = -3.5A 51 75 VGS = -1.8V, ID = -2.7A Forward Transfer Admittance |Yfs| - 12 - S VDS = -5V, ID = -4A Diode Forward Voltage VSD - -0.6 - V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 1291 - pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss - 266 - pF Reverse Transfer Capacitance Crss - 242 - pF Gate Resistnace Rg - 13 - Ω VDS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge (VGS = -8V) Qg - 23.7 - nC VDS = -10V, ID = -4A Total Gate Charge (VGS = -4.5V) Qg - 14.7 nC Gate-Source Charge Qgs - 1.8 - nC Gate-Drain Charge Qgd - 4.6 - nC Turn-On Delay Time tD(on) - 14 - ns VDS = -10V, VGS = -4.5V, RL = 2.5Ω, RG = 3.0Ω Turn-On Rise Time tr - 22 - ns Turn-Off Delay Time tD(off) - 74 - ns Turn-Off Fall Time tf - 75 - ns Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
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