IRF150 datasheet(2/2 Pages) ISC

Part #	IRF150

Description	High Power,High Speed Applications

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel MOSFET Transistor

IRF150

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250µA

100

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250µA

2.0

4.0

V

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=20A

0.055

Ω

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=100V; VGS=0

250

uA

VSD

Diode Forward Voltage

IS=40A; VGS=0

2.5

V

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

3000

pF

Crss

Reverse Transfer Capacitance

500

Coss

Output Capacitance

1500

tr

Rise Time

VGS=10V;

RGS=50Ω;

ID=20A;

VDD=75V;

RL=50Ω

450

ns

td(on)

Turn-on Delay Time

75

tf

Fall Time

200

td(off)

Turn-off Delay Time

300

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