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20SQ040 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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20SQ040 Datasheet(HTML) 2 Page - Diotec Semiconductor |
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20SQ040 , 20SQ045 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C Tj = 100°C VR = VRRM IR < 500 µA typ. 25 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 12 K/W 1) Thermal resistance junction to leads Wärmewiderstand Sperrschicht – Anschlussdrähte RthL < 2.5 K/W 2) 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 Measured in 3 mm distance from case – use for bypass diodes test Gemessen in 3 mm Abstand vom Gehäuse – für Bypass-Diodentest 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 80 60 40 20 0 [%] I FAV Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp. ) 1 1 [°C] T A 150 100 50 0 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 10 10 1 10 10 2 -1 -2 [A] I F 0 V F 0.4 0.6 [V] 1.0 T = 25°C j T = 125°C j 10 10 10 1 10 3 2 -1 [mA] I R 0 V RRM 40 60 80 100 [% ] Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung T = 25°C j T = 150°C j T = 125°C j T = 75°C j |
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