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ADR430 Datasheet(PDF) 6 Page - Analog Devices

Part No. ADR430
Description  Ultralow Noise XFET Voltage References with Current Sink and Source Capability
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Maker  AD [Analog Devices]
Homepage  http://www.analog.com
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ADR430 Datasheet(HTML) 6 Page - Analog Devices

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ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. B | Page 6 of 24
ADR434 ELECTRICAL CHARACTERISTICS
VIN = 6.1 V to 18 V, ILOAD = 0 mA, TA = 25°C, unless otherwise noted.
Table 5.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
B Grade
VO
4.0945
4.096
4.0975
V
A Grade
VO
4.091
4.096
4.101
V
Initial Accuracy
B Grade
VOERR
1.5
mV
B Grade
VOERR
0.04
%
A Grade
VOERR
5
mV
A Grade
VOERR
0.13
%
Temperature Coefficient
TCVO
SOIC-8 (B Grade)
−40°C < TA < +125°C
1
3
ppm/°C
SOIC-8 (A Grade)
−40°C < TA < +125°C
2
10
ppm/°C
MSOP-8
−40°C < TA < +125°C
2
10
ppm/°C
Line Regulation
∆VO/∆VIN
VIN = 6.1 V to 18 V
−40°C < TA < +125°C
5
20
ppm/V
Load Regulation
∆VO/∆ILOAD
ILOAD = 0 mA to 10 mA, VIN = 7 V
−40°C < TA < +125°C
15
ppm/mA
ILOAD = −10 mA to 0 mA, VIN = 7 V
−40°C < TA < +125°C
15
ppm/mA
Quiescent Current
IIN
No load, −40°C < TA < +125°C
595
800
µA
Voltage Noise
eN p-p
0.1 Hz to 10.0 Hz
6.25
µV p-p
Voltage Noise Density
eN
1 kHz
100
nV√Hz
Turn-On Settling Time
tR
CIN = 0
10
µs
Long-Term Stability1
∆VO
1,000 h
40
ppm
Output Voltage Hysteresis
VO_HYS
20
ppm
Ripple Rejection Ratio
RRR
fIN = 10 kHz
−70
dB
Short Circuit to GND
ISC
40
mA
Supply Voltage Operating Range
VIN
6.1
18
V
Supply Voltage Headroom
VIN − VO
2
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.


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