CESDB5V0D3 datasheet(3/6 Pages) JIANGSU

Part #	CESDB5V0D3

Description	Bi-direction ESD Protection Diode

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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3 / 6 page

CHANGJIANG ELEC.TECH.

CESDB5V0D3

www.cj-elec.com

C,May,2014

3

ELECTRICAL PARAMETER

V-I characteristics for a Bi-directional TVS

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse stand off voltage

VRWM

（

1）

5

V

Reverse leakage current

IR

VRWM=5V

1

μA

Breakdown voltage

V(BR)

IT=1mA

5.8

8.8

V

Clamping voltage

VC

（

2）

IPP=8A

15

V

Junction capacitance

CJ

VR=0V,f=1MHz

27

pF

(1).Other voltages available upon request.

(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5

Symbol

Parameter

VC

Clamping Voltage @ IPP

IPP

Peak Pulse Current

VBR

Breakdown Voltage @ IT

IT

Test Current

IR

Reverse Leakage Current @ VRWM

VRWM

Reverse Standoff Voltage

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CESDB5V0D3 Datasheet(PDF) 3 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

CESDB5V0D3 Datasheet(HTML) 3 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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