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DMN6040SK3-13 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN6040SK3-13
Description  Low Input Capacitance
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN6040SK3-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN6040SK3
Document number: DS35733 Rev. 5 - 2
2 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN6040SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
TC = +25°C
TC = +100°C
ID
20
13
A
Maximum Body Diode Forward Current (Note 5)
IS
4
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
30
A
Avalanche Current (Note 6)
IAR
14.2
A
Avalanche Energy (Note 6)
EAR
10
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TC = +25°C
PD
42
W
TC = +100°C
17
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
44
°C/W
Thermal Resistance, Junction to Case (Note 5)
RθJC
3
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1
3
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
30
40
m
Ω
VGS = 10V, ID = 20A
35
50
VGS = 4.5V, ID = 12A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
1287
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
57
Reverse Transfer Capacitance
Crss
44
Gate Resistance
RG
1.2
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V)
Qg
22.4
nC
VDS = 30V, ID = 4.3A
Total Gate Charge (VGS = 4.5V)
Qg
10.4
Gate-Source Charge
Qgs
4.9
Gate-Drain Charge
Qgd
3.0
Turn-On Delay Time
tD(on)
6.6
nS
VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
Turn-On Rise Time
tr
8.1
Turn-Off Delay Time
tD(off)
20.1
Turn-Off Fall Time
tf
4.0
Body Diode Reverse Recovery Time
trr
18
nS
IS = 4.3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
11.9
nC
IS = 4.3A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. UIS in production with L = 0.1mH, TJ = +25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.


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