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DMN6040SK3-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN6040SK3-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN6040SK3 Document number: DS35733 Rev. 5 - 2 2 of 6 www.diodes.com June 2014 © Diodes Incorporated DMN6040SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = -10V Steady State TC = +25°C TC = +100°C ID 20 13 A Maximum Body Diode Forward Current (Note 5) IS 4 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 30 A Avalanche Current (Note 6) IAR 14.2 A Avalanche Energy (Note 6) EAR 10 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TC = +25°C PD 42 W TC = +100°C 17 Thermal Resistance, Junction to Ambient (Note 5) RθJA 44 °C/W Thermal Resistance, Junction to Case (Note 5) RθJC 3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1 ⎯ 3 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) ⎯ 30 40 m Ω VGS = 10V, ID = 20A ⎯ 35 50 VGS = 4.5V, ID = 12A Diode Forward Voltage VSD ⎯ 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 1287 ⎯ pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 57 ⎯ Reverse Transfer Capacitance Crss ⎯ 44 ⎯ Gate Resistance RG ⎯ 1.2 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg ⎯ 22.4 ⎯ nC VDS = 30V, ID = 4.3A Total Gate Charge (VGS = 4.5V) Qg ⎯ 10.4 ⎯ Gate-Source Charge Qgs ⎯ 4.9 ⎯ Gate-Drain Charge Qgd ⎯ 3.0 ⎯ Turn-On Delay Time tD(on) ⎯ 6.6 ⎯ nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A Turn-On Rise Time tr ⎯ 8.1 ⎯ Turn-Off Delay Time tD(off) ⎯ 20.1 ⎯ Turn-Off Fall Time tf ⎯ 4.0 ⎯ Body Diode Reverse Recovery Time trr ⎯ 18 ⎯ nS IS = 4.3A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 11.9 ⎯ nC IS = 4.3A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. UIS in production with L = 0.1mH, TJ = +25°C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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