DMN3032LE

Document number: DS36695 Rev. 2 - 2

2 of 6

www.diodes.com

May 2014

© Diodes Incorporated

DMN3032LE

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

5.6

4.1

A

15.4

12.1

A

Maximum Continuous Body Diode Forward Current (Note 5)

1.5

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

25

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.8

W

1.1

Thermal Resistance, Junction to Ambient (Note 5)

69

°C/W

Total Power Dissipation (Note 5)

14

W

Thermal Resistance, Junction to Case (Note 5)

8.7

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

30

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

1

—

2

V

Static Drain-Source On-Resistance

—

22

29

mΩ

—

27

35

Forward Transfer Admittance

—

7

—

S

Diode Forward Voltage

—

0.7

1.5

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

498

—

pF

f = 1MHz

Output Capacitance

—

52

—

Reverse Transfer Capacitance

—

45

—

Gate Resistnace

—

2.2

—

Ω

Total Gate Charge

—

11.3

—

nC

Gate-Source Charge

—

1.4

—

Gate-Drain Charge

—

2.1

—

Turn-On Delay Time

—

2.3

—

ns

Turn-On Rise Time

—

3.9

—

Turn-Off Delay Time

—

10

—

Turn-Off Fall Time

—

1.9

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.