DMN3018SSS-13 datasheet(1/6 Pages) DIODES

Part #	DMN3018SSS-13

Description	Low On-Resistance

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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DMN3018SSS

Document number: DS35501 Rev. 5 - 2

1 of 6

www.diodes.com

February 2012

DMN3018SSS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(ON) max

ID max

TA = 25°C

30V

21m

Ω @ VGS = 10V

7.3A

35m

Ω @ VGS = 4.5V

5.5A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

•

Backlighting

•

Power Management Functions

•

DC-DC Converters

Features and Benefits

•

Low On-Resistance

•

Low Input Capacitance

•

Fast Switching Speed

•

ESD Protected Gate

•

“Green” component and RoHS compliant (Notes 1 & 2)

•

Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections Indicator: See diagram

•

Terminals: Finish

⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Part Number

Case

Packaging

DMN3018SSS-13

SO-8

2500/Tape & Reel

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

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Part no.

Year: “11” = 2011

1

4

8

5

N3018SS

YY WW

Xth week: 01 ~ 53

SO-8

Top View

Source

Gate

Protection

Diode

Gate

Drain

Body

Diode

Equivalent Circuit Per Element

S

D

G

D

S

Top View

Pin Configuration

ESD PROTECTED

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