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TLP598G Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP598G
Description  Photo-MOS FET in a Six Lead Plastic DIP Package
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 3 page
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TLP598G
2002-09-25
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.2
1.4
1.7
V
Reverse current
IR
VR = 3 V
10
µA
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Off
-state current
IOFF
VOFF = 400 V
1
µA
Capacitance
COFF
V = 0, f = 1 MHz
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
IFT
ION = 150 mA
1
5
mA
A connection
ION = 150 mA, IF = 10 mA
8
12
B connection
ION = 200 mA, IF = 10 mA
4
6
On
-state
resistance
C connection
RON
ION = 300 mA, IF = 10 mA
2
3
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
CS
VS = 0, f = 1 MHz
0.8
pF
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60%
5
´ 10
10
10
14
AC, 1 minute
2500
AC, 1 second (in oil)
5000
Vrms
Isolation voltage
BVS
DC, 1 minute (in oil)
5000
VDC
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Turn
-on time
tON
0.3
1.0
Turn
-off time
tOFF
VDD = 20 V, RL = 200 Ω
IF = 10 mA
(Note 3)
0.2
1.0
ms
(Note 3): Switching time test circuit
2
6
1
VDD
VOUT
RL
4
IF
tOFF
tON
10%
90%
VOUT
IF




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