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TLP598G Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP598G
Description  Photo-MOS FET in a Six Lead Plastic DIP Package
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 2 page
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TLP598G
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
30
mA
Forward current derating (Ta ≥ 25°C)
∆IF / °C
-0.3
mA / °C
Peak forward current (100 µs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Off
-state output terminal voltage
VOFF
400
V
A connection
150
B connection
200
On
-state RMS current
C connection
ION
300
mA
A connection
-1.5
B connection
-2.0
On
-state current derating (Ta ≥ 25°C)
C connection
∆ION / °C
-3.0
mA / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-40~85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
(Note 2)
BVS
2500
Vrms
(Note 2): Device considered a two
-terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6
shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VDD
320
V
Forward current
IF
10
15
20
mA
On
-state current
ION
150
mA
Operating temperature
Topr
-20
80
°C
Circuit Connections
A connection
B connection
C connection
1
2
3
6
5
4
LOAD
AC
DC
or
1
2
3
6
5
4
LOAD
DC
1
2
3
6
5
4
LOAD
DC




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