DMN2023UCB4-7 datasheet(2/8 Pages) DIODES

Part #	DMN2023UCB4-7

Description	Qualified to AEC-Q101 Standards for High Reliability

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Manufacturer	DIODES [Diodes Incorporated]

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DMN2023UCB4

Document number: DS35829 Rev. 10 - 2

2 of 8

www.diodes.com

March 2015

DMN2023UCB4

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VSSS

24

V

Gate-Source Voltage (Note 5)

VGSS

12

V

Continuous Source Current

@ TA = +25°C (Note 6)

Steady

State

TA = +25°C

TA = +70°C

IS

6.0

4.8

A

Pulsed Source Current @ TA = +25°C (Notes 6 & 7)

ISM

20

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Power Dissipation, @ TA = +25°C (Note 6)

PD

1.45

W

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)

RJA

88.21

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Source to Source Breakdown Voltage TJ = +25°C

V(BR)SS

24

—

V

IS = 1mA, VGS = V TEST CIRCUIT 1

Zero Gate Voltage Source Current TJ = +25°C

ISSS

—

1.0

µA

VSS = 20V, VGS = 0V TEST CIRCUIT 1

Gate-Body Leakage

IGSS

—

10

µA

VGS = 8V, VDS = 0V TEST CIRCUIT 2

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

0.5

—

1.3

V

VSS = 10V, IS = 1.0mA TEST CIRCUIT 3

Static Source -Source On-Resistance

RSS (ON)

17

21.5

25.5

m

Ω

VGS = 6.5V, IS = 3.0A TEST CIRCUIT 5

17.5

22

26

VGS = 4.5V, IS = 3.0A TEST CIRCUIT 5

18.5

23

27

VGS = 4.0V, IS = 3.0A TEST CIRCUIT 5

19

23.5

29

VGS = 3.7V, IS = 3.0A TEST CIRCUIT 5

19.5

24

33

VGS = 3.1V, IS = 3.0A TEST CIRCUIT 5

21.5

27

40

VGS = 2.5V, IS = 3.0A TEST CIRCUIT 5

Forward Transfer Admittance

|Yfs|

—

12

—

S

VSS = 10V, IS = 3.0A TEST CIRCUIT 4

Body Diode Forward Voltage

VF(S-S)

—

0.7

1

V

IF = 3.0A, VGS = 0V, TEST CIRCUIT 6

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

2564

3333

pF

VSS = 10V, VGS = 0V, f = 1.0MHz

TEST CIRCUIT 7

Output Capacitance

Coss

—

197

275

Reverse Transfer Capacitance

Crss

—

183

260

Total Gate Charge

Qg

—

29

37

nC

VGS = 4.5V, VSS = 10V, IS = 6A

TEST CIRCUIT 9

Turn-On Delay Time

tD(on)

—

10

15

ns

VDD = 10V,

RL = 3.33Ω, IS = 3.0A

TEST CIRCUIT 8

Turn-On Rise Time

tr

—

20

—

ns

Turn-Off Delay Time

tD(off)

—

75

110

ns

Turn-Off Fall Time

tf

—

29

—

ns

Notes:

5. AEC-Q101 VGS maximum is ±9.6V.

6. Device mounted on FR4 material with 1-inch

2 (6.45-cm2),2-oz.(0.071-mm thick) Cu.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

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