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TPC8201 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TPC8201
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPC8201 Datasheet(HTML) 3 Page - Toshiba Semiconductor

   
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TPC8201
2003-02-20
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cut−off current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
RDS (ON)
VGS = 4 V, ID = 2.5 A
58
80
mΩ
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
37
50
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
3
6
S
Input capacitance
Ciss
475
Reverse transfer capacitance
Crss
85
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
270
pF
Rise time
tr
10
Turn−on time
ton
16
Fall time
tf
13
Switching time
Turn−off time
toff
70
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
16
Gate−source charge
Qgs
11
Gate−drain (“miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 5 A
5
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
−1.2
V


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