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TPC8201 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TPC8201
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Download  7 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPC8201 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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TPC8201
2003-02-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
114
Single-device operation
(Note 3a)
Rth (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
278
°C/W
Marking (Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A
Note 5: Repetitive rating; pulse width limited by maximum channel temperature.
Note 6: ● on lower right of the marking indicates Pin 1.
Type
TPC8201
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
Lot No.
Weekly code:(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)


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